Diiodosilane [13760-02-6] 99.0%min

Diiodosilane [13760-02-6], as a source of silicon for chemical vapour deposition, is capable of generating more active silicon radicals under plasma enhancement, and the reaction has the characteristics of lower temperature and more controllable pressure operation while maintaining a high deposition rate. The current trend towards ultra-miniaturisation of semiconductor devices (especially chips), breaking the limits of Moore’s Law, often requires improvements in the substrate structure of conventional semiconductors, and DIS as a silicon precursor can be adapted for vapour phase deposition on a wide range of substrates.